Lasing characteristics of 1.5 μm GaInAsP-InP SCH-BIG-DR lasersJONG-IN SHIM; KOMORI, K; ARAI, S et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 6, pp 1736-1745, issn 0018-9197Article

Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxyKUNRUGSA, Maetee; KIRAVITTAYA, Suwit; PANYAKEOW, Somsak et al.Journal of crystal growth. 2014, Vol 402, pp 285-290, issn 0022-0248, 6 p.Article

Effect of Na-, K-, Mg-, and Ga dopants in A/B-sites on the optical band gap and photoluminescence behavior of [Ba_0.5Sr_0.5]TiO₃ powdersTUBCHAREON, Tassanee; SOISUWAN, Soipatta; RATANATHAMMAPHAN, Somchai et al.Journal of luminescence. 2013, Vol 142, pp 75-80, issn 0022-2313, 6 p.Article

In-droplet-induced formation of InP nanostructures by solid-source molecular-beam epitaxyJEVASUWAN, Wipakorn; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1548-1551, issn 0167-9317, 4 p.Conference Paper

InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxyJEVASUWAN, Wipakorn; BOONPENG, Poonyasiri; THAINOI, Supachok et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 275-278, issn 0022-0248, 4 p.Conference Paper

Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition sourceRATANATHAMMAPHAN, Somchai; THAINOI, Supachok; CHANGMOANG, Pornchai et al.Journal of crystal growth. 2001, Vol 227-28, pp 260-265, issn 0022-0248Conference Paper

THE EFFECT OF THIN GAP INSERTION LAYER ON INP NANOSTRUCTURE GROWN BY METAL―ORGANIC VAPOUR PHASE EPITAXYSOE SOE HAN; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Canadian journal of chemical engineering. 2012, Vol 90, Num 4, pp 915-918, issn 0008-4034, 4 p.Conference Paper

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In_0.5Ga_0.5 droplet amountPANKAOW, Naraporn; THAINOI, Supachok; PANYAKEOW, Somsak et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 282-285, issn 0022-0248, 4 p.Conference Paper

Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substratesKUNRUGSA, Maetee; KIRAVITTAYA, Suwit; SOPITPAN, Suwat et al.Journal of crystal growth. 2014, Vol 401, pp 441-444, issn 0022-0248, 4 p.Conference Paper

Influence of crystallization temperature on InP ring-shaped quantum-dot molecules grown by droplet epitaxyJEVASUWAN, Wipakorn; BOONPENG, Poonyasiri; PANYAKEOW, Somsak et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1416-1419, issn 0167-9317, 4 p.Conference Paper